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parameter max. units v ds drain- source voltage -40 v i d @ t a = 25c continuous drain current, v gs @ -10v -2.5 i d @ t a = 70c continuous drain current, v gs @ -10v -2.0 a i dm pulsed drain current -10 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 0.016 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 1/13/03 www.irf.com 1 irf5804 hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 62.5 c/w thermal resistance
v dss r ds(on) max (m i d -40v 198@v gs = -10v -2.5a 334@v gs = -4.5v -2.0a tsop-6 these p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the tsop-6 package with its customized leadframe produces a hexfet power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23. description ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge top view 1 2 d g a d d d s 3 4 5 6 pd - 94333a
2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -40 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = -1ma ??? ??? 198 v gs = -10v, i d = -2.5 ??? ??? 334 v gs = -4.5v, i d = -2.0a v gs(th) gate threshold voltage -1.0 ??? -3.0 v v ds = v gs , i d = -250a g fs forward transconductance 2.5 ??? ??? s v ds = -10v, i d = -2.5a ??? ??? -10 v ds = -32v, v gs = 0v ??? ??? -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 5.7 8.5 i d = -2.5a q gs gate-to-source charge ??? 2.8 4.2 nc v ds = -20v q gd gate-to-drain ("miller") charge ??? 2.1 3.2 v gs = -10v t d(on) turn-on delay time ??? 19 ??? v dd = -20v t r rise time ??? 430 ??? i d = -1.0a t d(off) turn-off delay time ??? 100 ??? r g = 6.0 ? t f fall time ??? 64 ??? v gs = -10v c iss input capacitance ??? 680 ??? v gs = 0v c oss output capacitance ??? 60 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 44 ??? ? = 1khz parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 24 36 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 32 49 nc di/dt = -100a/s source-drain ratings and characteristics 10 2.5 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current surface mounted on 1 in square cu board
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -2.5a 3.0 3.5 4.0 4.5 5.0 -v gs , gate-to-source voltage (v) 0.10 1.00 10.00 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -25v 20s pulse width 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -3.0v 20s pulse width tj = 25c vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.7v -3.5v bottom -3.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -3.0v 20s pulse width tj = 150c vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.7v -3.5v bottom -3.0v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.7 0.9 1.1 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 0 2 4 6 8 10 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d 2.5a v = 20v ds v = 32v ds 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -v gs, gate -to -source voltage (v) 0.10 0.15 0.20 0.25 0.30 0.35 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -2.5a v gs = -10v 1 2 3 4 5 6 7 8 9 10 -i d , drain current (a) 0.10 0.15 0.20 0.20 0.25 0.30 0.30 0.35 0.40 0.40 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -4.5v
www.irf.com 7 fig 16 typical power vs. time fig 15. typical threshold voltage vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 60 70 p o w e r ( w )
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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/03
ww = (1-26) if pre ce de d by last digit of calendar ye ar 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 2004 4 x 1999 0 ww = (27-52) if preceded by a letter we e k 27 28 29 30 50 w year a 2001 a b 2002 b c 2003 c d 2004 d x j 2005 1996 1997 1998 1999 2000 e f g h k y 2005 1996 1997 1998 2000 9 8 7 6 5 part numbe r top work we e k work 3a = s i3443dv part number code reference: 25 y 51 y 26 z 3b = ir f 5800 3c = irf 5850 3d = irf 5851 3e = irf 5852 3j = ir f 5806 3i = ir f5805 dat e code date code examples: yww = 9603 = 6c yww = 9632 = f f waf e r l ot numb e r code bottom example : t his is an s i3443dv notes : t his part marking information applies to devices produced before 02/26/2001 50 51 30 27 28 29 we e k wor k w = (27-52) if pre ce ded b y a le t t e r 25 26 24 03 02 04 we e k wor k 01 w = (1-26) if pre ce de d by last digit of calendar year part number code reference: l = ir f5804 m = i r f 5 8 0 3 n = irf 5820 c = irf 5850 j = irf 5806 k = irf5810 e = irf 5852 d = irf 5851 i = irf5805 b = irf5800 a = s i3443dv h 1998 2000 1999 k j b 2002 2005 1996 1997 2003 2004 e f g c d 2001 ye ar a y part number top 2001 1 y = year code lot w = we e k 7 1997 2000 1999 1998 0 9 8 2004 2005 1996 2002 2003 4 6 5 2 3 ye ar y y x b c d a w a x z y d b c w notes : t his part marking information applies to devices produced after 02/26/2001

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